Selecting eGaN® FET Optimal On-Resistance
Previously published articles showed that eGaN FETs behave for the most part just like silicon devices and can be evaluated using similar performance metrics.
In this white paper the die size optimization process for selecting the eGaN FET optimal on-resistance is discussed and an example application is used to show specific results. Since ‘optimum' means different things to different people, this process is aimed at maximizing switching device efficiency at a given load condition.
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