Improve DC-DC Forward Converter Efficiency with eGaN FETs
DC-DC converter designers can achieve higher power density at lower power levels by using forward converters with synchronous rectification and gallium nitride transistors. One very typical application is a 26 W, 48 V to 5 V , Power over Ethernet Powered Device (PoE-PD).
A simplified forward converter schematic for this application using eGaN FETs and Linear Technology's LT1952in conjunction with the manufacturer's LTC3900 synchronous rectifier controller on the secondary side.
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Related Categories: Inductors, Power, Semiconductors
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