Latest resources from Efficient Power Conversion Corporation (EPC)

Selecting eGaN® FET Optimal On-Resistance
Previously published articles showed that eGaN FETs behave for the most part just like silicon devices and can be evaluated using similar performan...

Gallium Nitride (GaN) Technology Overview
For over three decades, power management efficiency and cost showed steady improvement as innovations in power MOSFET structures, technology, and c...

eGaN® FETs and ICs for 48 V-12 V Regulated B...
Unregulated performance in a regulated design delivers unprecedented power density.
Low QOSS, zero QRR and low QGD, along with low inductance...